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| 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BAV199 features plastic smd package low leakage current: typ. 3 pa switching time: typ. 0.8 s continuous reverse voltage:max. 75 v repetitive peak reverse voltage:max. 85 v repetitive peak forward current:max. 500 ma. absolute maximum ratings ta = 25 parameter symbol conditions min max unit repetitive peak reverse voltage v rrm 85 v continuous reverse voltage v r 75 v single diode loaded 160 double diode loaded 140 repetitive peak forward current i frm 500 ma square wave; t j =25 prior to surge; t=1s 4 t=1ms 1 t=1s 0.5 total power dissipation p tot t amb =25 250 mw storage temperature t stg -65 +150 junction temperature t j 150 thermal resistance from junction to tie-point r th j-t p 360 k/w thermal resistance from junction to ambient r th j-a 500 k/w a non-repetitive peak forward current i fsm continuous forward current i f ma product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions typ max unit i f = 1 ma 900 i f = 10 ma 1000 i f = 50 ma 1100 i f = 150 ma 1250 v r = 75 v 0.003 5 v r =75v;t j = 150 380 diode capacitance c d f=1mhz;v r =0; 2 pf when switched from i f =10matoi r =10ma; r l = 100 ;measured at i r =1ma; na mv t rr reverse recovery time 3s 0.8 v f forward voltage i r reverse current marking marking jyp BAV199 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123 |
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